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Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering

Date

2014-01
Journal article
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dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCaymax, Matty
dc.contributor.authorVancoille, Eric
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVancoille, Eric
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T03:44:51Z
dc.date.available2021-10-22T03:44:51Z
dc.date.issued2014-01
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24244
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/115/2/10.1063/1.4862044
dc.source.beginpage23710
dc.source.issue2
dc.source.journalJournal of Applied Physics
dc.source.volume115
dc.title

Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering

dc.typeJournal article
dspace.entity.typePublication
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