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Electrode process dependent NBTI chracteristics of TiN gate FinFETs

Date

2012-04
Proceedings Paper
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dc.contributor.authorKim, Jinju
dc.contributor.authorCho, Moon Ju
dc.contributor.authorPantisano, Luigi
dc.contributor.authorChiarella, Thomas
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorLee, ByoungHun
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T12:16:25Z
dc.date.available2021-10-20T12:16:25Z
dc.date.issued2012-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20937
dc.source.beginpageGD 6.1
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate15/04/2012
dc.source.conferencelocationAnaheim, CA USA
dc.title

Electrode process dependent NBTI chracteristics of TiN gate FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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