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The black silicon method. VIII. A study of the performance of etching silicon using Sf6/O-2-based chemistry with cryogenical wafer cooling and a high density ICP Source

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dc.contributor.authorJansen, Henri
dc.contributor.authorDe Boer, M.
dc.contributor.authorWensink, H.
dc.contributor.authorKloeck, B.
dc.contributor.authorElwenspoek, M.
dc.date.accessioned2021-10-14T17:05:18Z
dc.date.available2021-10-14T17:05:18Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5367
dc.source.beginpage769
dc.source.endpage777
dc.source.issue9
dc.source.journalMicroelectronics Journal
dc.source.volume32
dc.title

The black silicon method. VIII. A study of the performance of etching silicon using Sf6/O-2-based chemistry with cryogenical wafer cooling and a high density ICP Source

dc.typeJournal article
dspace.entity.typePublication
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