Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
Publication:
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
Date
2021
Journal article
https://doi.org/10.1088/1361-6641/abdbc1
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
You, Shuzhen
;
Li, Xiangdong
;
Geens, Karen
;
Posthuma, Niels
;
Zhao, Ming
;
Liang, Hu
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Abstract
Description
Metrics
Views
1970
since deposited on 2022-02-25
Acq. date: 2025-10-27
Citations
Metrics
Views
1970
since deposited on 2022-02-25
Acq. date: 2025-10-27
Citations