Publication:

GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect

Date

2021
Journal article
https://doi.org/10.1088/1361-6641/abdbc1
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dc.contributor.authorYou, Shuzhen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-02-25T13:30:45Z
dc.date.available2022-02-25T13:30:45Z
dc.date.issued2021
dc.identifier.doi10.1088/1361-6641/abdbc1
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39156
dc.publisherIOP PUBLISHING LTD
dc.source.beginpage035008
dc.source.issue3
dc.source.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY
dc.source.numberofpages5
dc.source.volume36
dc.subject.keywordsHEMTS
dc.subject.keywordsTRANSISTORS
dc.title

GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect

dc.typeJournal article
dspace.entity.typePublication
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