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  4. Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits
 
Publication:

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits

Date

2005
Proceedings Paper
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Author(s)

Witters, Liesbeth  
;
Collaert, Nadine  
;
Nackaerts, Axel
;
Demand, Marc  
;
Demuynck, Steven  
;
Delvaux, Christie  
;
Lauwers, Anne  
;
Baerts, Christina  
;
Beckx, Stephan  
;
Boullart, Werner  
;
Brus, Stephan  
;
Degroote, Bart
;
de Marneffe, Jean-Francois  
;
Dixit, Abhisek
;
De Meyer, Kristin  
;
Ercken, Monique  
;
Goodwin, Michael
;
Hendrickx, Eric  
;
Heylen, Nancy  
;
Jaenen, Patrick  
;
Laidler, David  
;
Leray, Philippe  
;
Locorotondo, Sabrina  
;
Maenhoudt, Mireille
;
Moelants, Myriam  
;
Pollentier, Ivan  
;
Ronse, Kurt  
;
Rooyackers, Rita
;
Van Aelst, Joke  
;
Vandenberghe, Geert  
;
Vandeweyer, Tom  
;
Vanhaelemeersch, Serge  
;
Van Hove, Marleen
;
Van Olmen, Jan  
;
Verhaegen, Staf
;
Versluijs, Janko  
;
Vrancken, Christa  
;
Wiaux, Vincent  
;
Willems, Patrick  
;
Wouters, Johan M. D.  
;
Jurczak, Gosia  
;
Biesemans, Serge  

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1968 since deposited on 2021-10-16
Acq. date: 2025-10-23

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1968 since deposited on 2021-10-16
Acq. date: 2025-10-23

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