Publication:

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits

Date

2005
Proceedings Paper
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dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorNackaerts, Axel
dc.contributor.authorDemand, Marc
dc.contributor.authorDemuynck, Steven
dc.contributor.authorDelvaux, Christie
dc.contributor.authorLauwers, Anne
dc.contributor.authorBaerts, Christina
dc.contributor.authorBeckx, Stephan
dc.contributor.authorBoullart, Werner
dc.contributor.authorBrus, Stephan
dc.contributor.authorDegroote, Bart
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDixit, Abhisek
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorErcken, Monique
dc.contributor.authorGoodwin, Michael
dc.contributor.authorHendrickx, Eric
dc.contributor.authorHeylen, Nancy
dc.contributor.authorJaenen, Patrick
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorDelvaux, Christie
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBaerts, Christina
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorJaenen, Patrick
dc.contributor.imecauthorLaidler, David
dc.contributor.imecauthorLeray, Philippe
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorMoelants, Myriam
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecLaidler, David::0000-0003-4055-3366
dc.contributor.orcidimecPollentier, Ivan::0000-0002-4266-6500
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.contributor.orcidimecBrus, Stephan::0000-0003-3554-0640
dc.contributor.orcidimecde Marneffe, Jean-Francois::0000-0001-5178-6670
dc.contributor.orcidimecHendrickx, Eric::0000-0003-2516-0417
dc.contributor.orcidimecLeray, Philippe::0000-0002-1086-270X
dc.contributor.orcidimecWiaux, Vincent::0000-0002-8923-5708
dc.date.accessioned2021-10-16T07:12:30Z
dc.date.available2021-10-16T07:12:30Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11566
dc.source.beginpage106
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2005
dc.source.conferencelocationKyoto Japan
dc.source.endpage107
dc.title

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits

dc.typeProceedings paper
dspace.entity.typePublication
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