Publication:

Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices

Date

2020
Proceedings Paper
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dc.contributor.authorRonchi, Nicolo
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorMin, Jinhong
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorShin, Changhwan
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorMin, Jinhong
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2021-10-29T03:14:26Z
dc.date.available2021-10-29T03:14:26Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35853
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9108125
dc.source.conference2020 IEEE International Memory Workshop (IMW)
dc.source.conferencedate17/05/2020
dc.source.conferencelocationDresden Germany
dc.title

Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices

dc.typeProceedings paper
dspace.entity.typePublication
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