Publication:

High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

Date

2007
Proceedings Paper
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dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.F.
dc.contributor.authorYu, HongYu
dc.contributor.authorYang, J.J.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorZhu, C.X.
dc.contributor.authorDu, A.Y.
dc.contributor.authorTrigg, A.D.
dc.contributor.authorZhang, G.
dc.contributor.authorSik, H.W.
dc.contributor.authorRen, C.
dc.contributor.authorLim, Andy
dc.contributor.authorLee, Rinus
dc.contributor.authorYu, X.F.
dc.contributor.authorChen, J.D.
dc.contributor.authorChin, Albert
dc.contributor.authorYeo, Y.C.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorChua, T.C.
dc.contributor.authorNouri, F.
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T21:38:44Z
dc.date.available2021-10-16T21:38:44Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13212
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate18/09/2006
dc.source.conferencelocationIbaraki Japan
dc.title

High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

dc.typeProceedings paper
dspace.entity.typePublication
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