Publication:

Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K

Date

1996
Journal article
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dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T15:14:20Z
dc.date.available2021-09-29T15:14:20Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1373
dc.source.beginpageC3-55
dc.source.endpageC3-59
dc.source.journalJournal de Physique IV. Colloque 3
dc.source.volume6
dc.title

Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K

dc.typeJournal article
dspace.entity.typePublication
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