Publication:

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy

Date

2020
Journal article
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dc.contributor.authorLechaux, Yoann
dc.contributor.authorMinj, Albert
dc.contributor.authorMechin, Laurence
dc.contributor.authorLiang, Hu
dc.contributor.authorGeens, Karen
dc.contributor.authorZhao, Ming
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGuillet, Bruno
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-28T23:43:21Z
dc.date.available2021-10-28T23:43:21Z
dc.date.issued2020
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35444
dc.identifier.urlhttps://doi.org/10.1088/1361-6641/abcb19
dc.source.beginpage24002
dc.source.issue2
dc.source.journalSemiconductor Science and Technology
dc.source.volume36
dc.title

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy

dc.typeJournal article
dspace.entity.typePublication
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