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Articles
Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
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Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Adelmann, Christoph
;
Lin, Dennis
;
Nyns, Laura
;
Schepers, Bart
;
Delabie, Annelies
;
Van Elshocht, Sven
;
Caymax, Matty
Journal
Microelectronic Engineering
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1931
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Acq. date: 2025-12-12
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Metrics
Views
1931
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-12
Citations