Publication:

Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices

Date

2011
Journal article
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dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorSchepers, Bart
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-19T12:28:20Z
dc.date.available2021-10-19T12:28:20Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18446
dc.source.beginpage1098
dc.source.endpage1100
dc.source.issue7
dc.source.journalMicroelectronic Engineering
dc.source.volume88
dc.title

Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices

dc.typeJournal article
dspace.entity.typePublication
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