Impact of top-surface tunnel-oxide nitridation on flash memory performance and reliability

dc.contributor.author	Ganguly, Udayan
dc.contributor.author	Guarini, Theresa
dc.contributor.author	Wellekens, Dirk
dc.contributor.author	Date, Lucien
dc.contributor.author	Cho, Yonah
dc.contributor.author	Rothschild, Aude
dc.contributor.author	Swenberg, Johanes
dc.contributor.imecauthor	Wellekens, Dirk
dc.contributor.imecauthor	Date, Lucien
dc.date.accessioned	2021-10-18T16:27:19Z
dc.date.available	2021-10-18T16:27:19Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0741-3106
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17126
dc.source.beginpage	123
dc.source.endpage	125
dc.source.issue	2
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	31
dc.title	Impact of top-surface tunnel-oxide nitridation on flash memory performance and reliability
dc.type	Journal article
dspace.entity.type	Publication
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