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First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Date

2014
Proceedings Paper
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dc.contributor.authorMinari, Hideki
dc.contributor.authorYoshida, Shinichi
dc.contributor.authorSawada, Ken
dc.contributor.authorNakazawa, Masashi
dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorGuo, Weiming
dc.contributor.authorJiang, Sijia
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorPourtois, Geoffrey
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-22T03:50:24Z
dc.date.available2021-10-22T03:50:24Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24257
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/11/111.abstract
dc.source.beginpage111
dc.source.conferenceHigh Purity and High Mobility Semiconductors 13
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.source.endpage123
dc.title

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

dc.typeProceedings paper
dspace.entity.typePublication
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