A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core

Publication:

2021

Journal article

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IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

1550 since deposited on 2021-11-02

1last month

Acq. date: 2026-04-27