A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core

dc.contributor.author	Yun, Byeonghun
dc.contributor.author	Park, Dae-Woong
dc.contributor.author	Choi, Won-Jong
dc.contributor.author	Usman Mahmood, Hafiz
dc.contributor.author	Lee, Sang-Gug
dc.contributor.imecauthor	Park, Dae-Woong
dc.contributor.orcidext	Yun, Byeonghun::0000-0001-7847-1329
dc.contributor.orcidext	Choi, Won-Jong::0000-0002-8019-4778
dc.contributor.orcidimec	Park, Dae-Woong::0000-0003-2755-3935
dc.date.accessioned	2022-09-27T07:49:22Z
dc.date.available	2021-11-02T16:03:41Z
dc.date.available	2022-09-27T07:49:22Z
dc.date.issued	2021
dc.identifier.doi	10.1109/LMWC.2020.3046745
dc.identifier.issn	1531-1309
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/38083
dc.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage	292
dc.source.endpage	295
dc.source.issue	3
dc.source.journal	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
dc.source.numberofpages	4
dc.source.volume	31
dc.title	A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core
dc.type	Journal article
dspace.entity.type	Publication
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