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Conference contributions
Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate
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Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nguyen, Duy
;
Loo, Roger
;
Caymax, Matty
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Abstract
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1867
since deposited on 2021-10-16
Acq. date: 2026-01-06
Citations
Metrics
Views
1867
since deposited on 2021-10-16
Acq. date: 2026-01-06
Citations