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Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate

Date

2007
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dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T18:08:16Z
dc.date.available2021-10-16T18:08:16Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12612
dc.identifier.urlhttp://www.comp.metro-u.ac.jp/iscsi-5/
dc.source.beginpage47
dc.source.conference5th International Symposium on Control of Semiconductor Interfaces
dc.source.conferencedate12/11/2007
dc.source.conferencelocationTokyo Japan
dc.source.endpage48
dc.title

Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate

dc.typeMeeting abstract
dspace.entity.typePublication
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