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Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates
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Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates
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Date
2010-12
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Gang
;
Rosseel, Erik
;
Loo, Roger
;
Favia, Paola
;
Bender, Hugo
;
Caymax, Matty
;
Heyns, Marc
;
Vandervorst, Wilfried
Journal
Journal of Applied Physics
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Acq. date: 2026-01-09
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1847
since deposited on 2021-10-19
Acq. date: 2026-01-09
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Downloads
1
since deposited on 2021-10-19
Acq. date: 2026-01-09
Views
1847
since deposited on 2021-10-19
Acq. date: 2026-01-09
Citations