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Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Publication:
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Date
2008
Proceedings Paper
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16474.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pavanello, Marcelo Antonio
;
Martino, Joao Antonio
;
Simoen, Eddy
;
Rooyackers, Rita
;
Collaert, Nadine
;
Claeys, Cor
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1848
since deposited on 2021-10-17
Acq. date: 2025-10-25
Citations
Metrics
Views
1848
since deposited on 2021-10-17
Acq. date: 2025-10-25
Citations