Publication:

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Date

2020
Journal article
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dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorBorga, Matteo
dc.contributor.authorRuzzarin, Maria
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorStoffels, Steve
dc.contributor.authorYou, Shuzhen
dc.contributor.authorGeens, Karen
dc.contributor.authorLiang, Hu
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-29T01:08:05Z
dc.date.available2021-10-29T01:08:05Z
dc.date.issued2020
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35621
dc.identifier.urlhttps://doi.org/10.35848/1882-0786/ab6ddd
dc.source.beginpage24004
dc.source.issue2
dc.source.journalApplied Physics Express
dc.source.volume13
dc.title

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

dc.typeJournal article
dspace.entity.typePublication
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