Publication:

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Date

2023
Journal article
https://doi.org/10.3390/mi14112018
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dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorBury, Erik
dc.contributor.authorGrill, Alexander
dc.contributor.authorYu, Zhuoqing
dc.contributor.authorMakarov, Alexander
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorVexler, Mikhail
dc.contributor.authorVandemaele, Michiel
dc.contributor.authorWang, Runsheng
dc.contributor.authorSpessot, Alessio
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorMakarov, Alexander
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecTyaginov, Stanislav::0000-0002-5348-2096
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecMakarov, Alexander::0000-0002-9927-6511
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecSpessot, Alessio::0000-0003-2381-0121
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2024-02-05T16:07:47Z
dc.date.available2023-12-31T17:21:40Z
dc.date.available2024-02-05T16:07:47Z
dc.date.embargo2023-10-30
dc.date.issued2023
dc.description.wosFundingTextNo Statement Available
dc.identifier.doi10.3390/mi14112018
dc.identifier.issn2072-666X
dc.identifier.pmidMEDLINE:38004876
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43334
dc.publisherMDPI
dc.source.beginpageArt. 2018
dc.source.endpageN/A
dc.source.issue11
dc.source.journalMICROMACHINES
dc.source.numberofpages18
dc.source.volume14
dc.subject.keywordsSPHERICAL-HARMONICS EXPANSION
dc.subject.keywordsINDUCED MOSFET DEGRADATION
dc.subject.keywordsELECTRON
dc.subject.keywordsRELIABILITY
dc.subject.keywordsDEFECTS
dc.subject.keywordsTRANSISTORS
dc.subject.keywordsIMPACT
dc.subject.keywordsCHARGE
dc.subject.keywordsGATE
dc.subject.keywordsMECHANISMS
dc.title

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

dc.typeJournal article
dspace.entity.typePublication
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