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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Date

2020
Journal article
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dc.contributor.authorWang, Hongyue
dc.contributor.authorHsu, Brent
dc.contributor.authorZhao, Ming
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorWang, Jinyang
dc.contributor.imecauthorWang, Hongyue
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-29T07:47:02Z
dc.date.available2021-10-29T07:47:02Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36300
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9207843
dc.source.beginpage4827
dc.source.endpage4833
dc.source.issue11
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume67
dc.title

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

dc.typeJournal article
dspace.entity.typePublication
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