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Sealing of porous low-k dielectrics: an ellipsometric porosimetry study of UV-O3 oxidized SiOxCy films

Date

2004
Journal article
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dc.contributor.authorWhelan, Caroline
dc.contributor.authorLe, Quoc Toan
dc.contributor.authorCecchet, Francesca
dc.contributor.authorSatta, Alessandra
dc.contributor.authorPireaux, Jean-Jacques
dc.contributor.authorRudolf, Petra
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.date.accessioned2021-10-15T17:54:31Z
dc.date.available2021-10-15T17:54:31Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9916
dc.source.beginpageF8
dc.source.endpageF10
dc.source.issue2
dc.source.journalElectrochemical and Solid-State Letters
dc.source.volume7
dc.title

Sealing of porous low-k dielectrics: an ellipsometric porosimetry study of UV-O3 oxidized SiOxCy films

dc.typeJournal article
dspace.entity.typePublication
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