Publication:
High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
Date
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.author | Bender, Hugo | |
| dc.contributor.author | Brijs, Bert | |
| dc.contributor.author | Conard, Thierry | |
| dc.contributor.author | De Gendt, Stefan | |
| dc.contributor.author | Delabie, Annelies | |
| dc.contributor.author | Heyns, Marc | |
| dc.contributor.author | Onsia, Bart | |
| dc.contributor.author | Ragnarsson, Lars-Ake | |
| dc.contributor.author | Richard, Olivier | |
| dc.contributor.author | Vandervorst, Wilfried | |
| dc.contributor.author | Van Elshocht, Sven | |
| dc.contributor.author | Zhao, Chao | |
| dc.contributor.author | Maes, J.W. | |
| dc.contributor.author | Daté, L. | |
| dc.contributor.author | Pique, D. | |
| dc.contributor.author | Young, E. | |
| dc.contributor.author | Tsai, W. | |
| dc.contributor.author | Shimamoto, Y. | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.contributor.imecauthor | Bender, Hugo | |
| dc.contributor.imecauthor | Conard, Thierry | |
| dc.contributor.imecauthor | De Gendt, Stefan | |
| dc.contributor.imecauthor | Delabie, Annelies | |
| dc.contributor.imecauthor | Heyns, Marc | |
| dc.contributor.imecauthor | Onsia, Bart | |
| dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
| dc.contributor.imecauthor | Richard, Olivier | |
| dc.contributor.imecauthor | Vandervorst, Wilfried | |
| dc.contributor.imecauthor | Van Elshocht, Sven | |
| dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
| dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
| dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
| dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
| dc.contributor.orcidimec | Van Elshocht, Sven::0000-0002-6512-1909 | |
| dc.date.accessioned | 2021-10-15T04:07:18Z | |
| dc.date.available | 2021-10-15T04:07:18Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7298 | |
| dc.source.beginpage | 47 | |
| dc.source.conference | CMOS Front-End Materials and Process Technology | |
| dc.source.conferencedate | 21/04/2003 | |
| dc.source.conferencelocation | San Francisco, CA USA | |
| dc.source.endpage | 58 | |
| dc.title | High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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