Publication:

Highly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETs

Date

2017
Meeting abstract
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dc.contributor.authorRosseel, Erik
dc.contributor.authorKohen, David
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorTolle, John
dc.contributor.authorVandooren, Anne
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Dan
dc.contributor.authorLanger, Robert
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-24T12:25:57Z
dc.date.available2021-10-24T12:25:57Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29325
dc.source.beginpageM6.4
dc.source.conferencee-MRS Fall Meeting
dc.source.conferencedate18/09/2017
dc.source.conferencelocationWarsaw Poland
dc.title

Highly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETs

dc.typeMeeting abstract
dspace.entity.typePublication
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