Publication:

Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

Date

1997
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorAbou-Khalil, M.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorMatsui, T.
dc.contributor.authorWu, K.
dc.contributor.imecauthorSchreurs, Dominique
dc.date.accessioned2021-09-30T07:54:37Z
dc.date.available2021-09-30T07:54:37Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1692
dc.source.beginpage697
dc.source.conferenceAsia-Pacific Microwave Conference - APMC
dc.source.conferencedate2/12/1997
dc.source.conferencelocationHong-Kong
dc.source.endpage700
dc.title

Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
1662.pdf
Size:
355.62 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions