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Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle

Date

2008
Journal article
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dc.contributor.authorCroes, Kristof
dc.contributor.authorCannata, Gianluca
dc.contributor.authorZhao, Larry
dc.contributor.authorTokei, Zsolt
dc.contributor.imecauthorCroes, Kristof
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.date.accessioned2021-10-17T06:39:17Z
dc.date.available2021-10-17T06:39:17Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13570
dc.source.beginpage1384
dc.source.endpage1387
dc.source.issue8_9
dc.source.journalMicroelectronics Reliability
dc.source.volume48
dc.title

Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle

dc.typeJournal article
dspace.entity.typePublication
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