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Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

Date

2019-06
Meeting abstract
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dc.contributor.authorRosseel, Erik
dc.contributor.authorTirrito, Matteo
dc.contributor.authorPorret, Clément
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorNakazaki, Nobuya
dc.contributor.authorTolle, John
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorNakazaki, Nobuya
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-27T17:16:48Z
dc.date.available2021-10-27T17:16:48Z
dc.date.embargo9999-12-31
dc.date.issued2019-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33909
dc.source.beginpage44
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison, WI USA
dc.source.endpage45
dc.title

Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

dc.typeMeeting abstract
dspace.entity.typePublication
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