Publication:

Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

Date

2021
Journal article
https://doi.org/10.1109/TNS.2021.3065563
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dc.contributor.authorLi, Kan
dc.contributor.authorZhang, En Xia
dc.contributor.authorGorchichko, Mariia
dc.contributor.authorWang, Peng Fei
dc.contributor.authorReaz, Mahmud
dc.contributor.authorZhao, Simeng E.
dc.contributor.authorHiblot, Gaspard
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorJourdain, Anne
dc.contributor.authorAlles, Michael L.
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.imecauthorHiblot, Gaspard
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorJourdain, Anne
dc.contributor.orcidextLi, Kan::0000-0002-6704-3991
dc.contributor.orcidextWang, Peng Fei::0000-0002-8711-9113
dc.contributor.orcidextReaz, Mahmud::0000-0002-5896-7850
dc.contributor.orcidextZhao, Simeng E.::0000-0003-1968-8055
dc.contributor.orcidimecHiblot, Gaspard::0000-0002-3869-965X
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.date.accessioned2022-02-24T16:26:09Z
dc.date.available2022-02-24T16:26:09Z
dc.date.issued2021
dc.identifier.doi10.1109/TNS.2021.3065563
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39130
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage740
dc.source.endpage747
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages8
dc.source.volume68
dc.subject.keywords1/F NOISE
dc.subject.keywordsBIAS DEPENDENCE
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsCHARGE YIELD
dc.subject.keywordsMOS DEVICES
dc.subject.keywordsDEFECTS
dc.subject.keywordsBULK
dc.subject.keywordsNMOSFETS
dc.title

Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

dc.typeJournal article
dspace.entity.typePublication
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