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Towards the integration of In53Ga47As on 300 mm Si for CMOS sub 7 nm node: development of thin graded InGaAs buffers
Publication:
Towards the integration of In53Ga47As on 300 mm Si for CMOS sub 7 nm node: development of thin graded InGaAs buffers
Date
2015
Meeting abstract
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mols, Yves
;
Kunert, Bernardette
;
Gaudin, Gweltaz
;
Langer, Robert
;
Caymax, Matty
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Abstract
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1861
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
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Views
1861
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations