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Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors

Date

2015
Proceedings Paper
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dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, R.
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T22:50:34Z
dc.date.available2021-10-22T22:50:34Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25902
dc.source.beginpagena
dc.source.conferenceInternational Symposium on EcoTopia Science - ISETS
dc.source.conferencedate27/11/2015
dc.source.conferencelocationNagoya Japan
dc.title

Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors

dc.typeProceedings paper
dspace.entity.typePublication
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