Publication:

Tantalum-based gate electrode metals for advanced CMOS devices

Date

2005
Proceedings Paper
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dc.contributor.authorHooker, Jacob
dc.contributor.authorLander, Rob
dc.contributor.authorCubaynes, Florence
dc.contributor.authorSchram, Tom
dc.contributor.authorRoozeboom, F.
dc.contributor.authorvan Zijl, J.
dc.contributor.authorMaas, M.
dc.contributor.authorvan den Heuvel, F.C.
dc.contributor.authorNaburgh, E.
dc.contributor.authorvan Berkum, J.G.M.
dc.contributor.authorTamminga, Y.
dc.contributor.authorDao, T.
dc.contributor.authorHenson, Kirklen
dc.contributor.authorSchaekers, Marc
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorTokei, Zsolt
dc.contributor.authorDemand, Marc
dc.contributor.authorDachs, C.
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorDemand, Marc
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-16T02:08:21Z
dc.date.available2021-10-16T02:08:21Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10603
dc.source.beginpage215
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage224
dc.title

Tantalum-based gate electrode metals for advanced CMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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