Publication:

Silicide and shallow trench isolation line width dependent stress induced junction leakage

Date

2000
Proceedings Paper
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dc.contributor.authorSteegen, An
dc.contributor.authorLauwers, Anne
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorRooyackers, Rita
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-14T13:50:41Z
dc.date.available2021-10-14T13:50:41Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4770
dc.source.beginpage180
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate13/06/2000
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage181
dc.title

Silicide and shallow trench isolation line width dependent stress induced junction leakage

dc.typeProceedings paper
dspace.entity.typePublication
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