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Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies

Date

2004
Journal article
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dc.contributor.authorRittersma, Chris
dc.contributor.authorLoo, Josine
dc.contributor.authorPonomarev, Youri
dc.contributor.authorVerheijen, M.A.
dc.contributor.authorKaiser, M.
dc.contributor.authorRoozeboom, F.
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-15T15:50:44Z
dc.date.available2021-10-15T15:50:44Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9513
dc.source.beginpageG870
dc.source.endpageG877
dc.source.issue12
dc.source.journalJournal of the Electrochemical Society
dc.source.volume151
dc.title

Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies

dc.typeJournal article
dspace.entity.typePublication
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