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Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
Publication:
Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
Date
2024
Journal article
https://doi.org/10.1016/j.sse.2023.108807
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
de Andrade, Maria Gloria Cano
;
Nogueira, Carlos Roberto
;
Graciano Junior, Nilton
;
Doria, Rodrigo T.
;
Trevisoli, Renan
;
Simoen, Eddy
Journal
SOLID-STATE ELECTRONICS
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875
since deposited on 2023-12-14
Acq. date: 2025-10-27
Citations
Metrics
Views
875
since deposited on 2023-12-14
Acq. date: 2025-10-27
Citations