Publication:

Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

Date

2024
Journal article
https://doi.org/10.1016/j.sse.2023.108807
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dc.contributor.authorde Andrade, Maria Gloria Cano
dc.contributor.authorNogueira, Carlos Roberto
dc.contributor.authorGraciano Junior, Nilton
dc.contributor.authorDoria, Rodrigo T.
dc.contributor.authorTrevisoli, Renan
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2024-03-07T10:07:28Z
dc.date.available2023-12-14T17:35:51Z
dc.date.available2024-03-07T10:07:28Z
dc.date.issued2024
dc.description.wosFundingTextThe authors would like to acknowledge the imec's Partner Program on high-speed analog and RF devices imec and ARF team in for providing the samples. This work was supported by Sao Paulo Research Foundation (FAPESP) grant #2023/00123-7, #2023/08068-5 and #2019/15500-5. National Council for Scientific and Technological Development (CNPq) grants #427975/2016-6, #303938/2020-0, #406193/2022-3, and 406193/2022-3 (Namitec). Also financed in part by the Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior - Brasil (CAPES) - Finance Code 001 and CNPq.
dc.identifier.doi10.1016/j.sse.2023.108807
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43259
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108807
dc.source.endpageN/A
dc.source.issueJanuary
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages5
dc.source.volume211
dc.subject.keywordsDEEP-LEVELS
dc.title

Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

dc.typeJournal article
dspace.entity.typePublication
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