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Tall triple-gate device with TiN/HfO2 gate stack

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dc.contributor.authorCollaert, Nadine
dc.contributor.authorDemand, Marc
dc.contributor.authorFerain, Isabelle
dc.contributor.authorLisoni, Judit
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorZimmerman, Paul
dc.contributor.authorYim, Yong Sik
dc.contributor.authorSchram, Tom
dc.contributor.authorMannaert, Geert
dc.contributor.authorGoodwin, Michael
dc.contributor.authorHooker, Jacob
dc.contributor.authorNeuilly, Francois
dc.contributor.authorKim, Myeong-Cheol
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBoullart, Werner
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-16T01:00:36Z
dc.date.available2021-10-16T01:00:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10246
dc.source.beginpage108
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2005
dc.source.conferencelocationKyoto Japan
dc.source.endpage109
dc.title

Tall triple-gate device with TiN/HfO2 gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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