Publication:

Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers

Date

2019
Proceedings Paper
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dc.contributor.authorPadovani, Andrea
dc.contributor.authorPesic, Milan
dc.contributor.authorAnik Kumar, Mondol
dc.contributor.authorBlomme, Pieter
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorVadakupudhu Palayam, Senthil
dc.contributor.authorBaten, Zunaid
dc.contributor.authorLarcher, Luca
dc.contributor.authorVan den Bosch, Geert
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVadakupudhu Palayam, Senthil
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.accessioned2021-10-27T15:17:52Z
dc.date.available2021-10-27T15:17:52Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33721
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8720566
dc.source.beginpage7C.1
dc.source.conference2019 IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate31/03/2019
dc.source.conferencelocationMonterey, CA USA
dc.title

Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers

dc.typeProceedings paper
dspace.entity.typePublication
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