Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

dc.contributor.author	Afanasiev, Valeri
dc.contributor.author	Chou, H.Y.
dc.contributor.author	Thoan, N.H.
dc.contributor.author	Adelmann, Christoph
dc.contributor.author	Lin, Dennis
dc.contributor.author	Houssa, Michel
dc.contributor.author	Stesmans, Andre
dc.contributor.imecauthor	Afanasiev, Valeri
dc.contributor.imecauthor	Adelmann, Christoph
dc.contributor.imecauthor	Lin, Dennis
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.orcidimec	Adelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.date.accessioned	2021-10-20T10:01:02Z
dc.date.available	2021-10-20T10:01:02Z
dc.date.issued	2012
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20265
dc.identifier.url	http://dx.doi.org/10.1063/1.4710553
dc.source.beginpage	202104
dc.source.issue	20
dc.source.journal	Applied Physics Letters
dc.source.volume	100
dc.title	Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
dc.type	Journal article
dspace.entity.type	Publication
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