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Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions

 
dc.contributor.authorSaraza-Canflanca, Pablo
dc.contributor.authorRodriguez, Rosana
dc.contributor.authorMartin-Martinez, Javier
dc.contributor.authorCastro-Lopez, Rafael
dc.contributor.authorRoca, Elisenda
dc.contributor.authorV. Fernandez, Fancisco
dc.contributor.authorNafria, Montserrat
dc.contributor.authorDiaz Fortuny, Javier
dc.contributor.imecauthorDiaz Fortuny, Javier
dc.contributor.orcidimecDiaz Fortuny, Javier::0000-0002-8186-071X
dc.date.accessioned2021-11-25T14:52:49Z
dc.date.available2021-11-02T15:56:36Z
dc.date.available2021-11-25T14:52:49Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108037
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37527
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages4
dc.source.volume185
dc.subject.keywordsINSTABILITIES
dc.title

Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions

dc.typeJournal article
dspace.entity.typePublication
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