Evanescent Coupling Degradation from Particle-Induced Voids in III-V/Si Micro-transfer-printed Integrated Lasers

Abstract

Void-induced evanescent coupling degradation in InP-on-Si lasers is analyzed. A location-dependent analysis reveals 100nm particles at the tapers cause a 0.913 dB loss (vs. 0.058 dB at mid-coupon). Guidelines for void-tolerant evanescent interfaces on the SiPh platform are proposed.