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Multi-gate devices for the 32nm technology node and beyond: challenges for selective epitaxial growth

Date

2007
Meeting abstract
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dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorDixit, Abhisek
dc.contributor.authorLeys, Frederik
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T15:22:32Z
dc.date.available2021-10-16T15:22:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11897
dc.source.conferenceBook of Abstracts 5th Int. Conf. Silicon Epitaxy and Heterostructures - ICSI-5
dc.source.conferencedate20/05/2007
dc.source.conferencelocationMarseille France
dc.title

Multi-gate devices for the 32nm technology node and beyond: challenges for selective epitaxial growth

dc.typeMeeting abstract
dspace.entity.typePublication
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