Publication:

Negative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics

Date

2013
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorDuan, G.X
dc.contributor.authorZhang, C. X.
dc.contributor.authorZhang, E.X.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorSchrimpf, R.D
dc.contributor.authorReed, R. A.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-21T07:23:50Z
dc.date.available2021-10-21T07:23:50Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22285
dc.source.conference44th IEEE Semcionductor Interface Specialists Conference - SISC
dc.source.conferencedate5/12/2013
dc.source.conferencelocationArlington, VA USA
dc.title

Negative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
27640.pdf
Size:
5.93 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions