Publication:

High FET performance for a future CMOS GeO2-based technology

Date

2010
Journal article
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dc.contributor.authorBellenger, Florence
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMerckling, Clement
dc.contributor.authorHoussa, Michel
dc.contributor.authorPenaud, Julien
dc.contributor.authorNyns, Laura
dc.contributor.authorVrancken, Evi
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T15:19:36Z
dc.date.available2021-10-18T15:19:36Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16727
dc.source.beginpage402
dc.source.endpage404
dc.source.issue5
dc.source.journalIEEE Electron Device Letters
dc.source.volume31
dc.title

High FET performance for a future CMOS GeO2-based technology

dc.typeJournal article
dspace.entity.typePublication
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