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Characterization and modeling of diodes in sub-45 nm CMOS technologies under HBM stress conditions

Date

2007
Proceedings Paper
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dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorScholz, Mirko
dc.contributor.authorTremouilles, David
dc.contributor.authorSawada,
dc.contributor.authorNakaei,
dc.contributor.authorHasebe,
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.date.accessioned2021-10-16T17:33:46Z
dc.date.available2021-10-16T17:33:46Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12497
dc.source.beginpage158
dc.source.conferenceEOS/ESD Symposium Proceedings
dc.source.conferencedate16/09/2007
dc.source.conferencelocationAnaheim, CA USA
dc.source.endpage164
dc.title

Characterization and modeling of diodes in sub-45 nm CMOS technologies under HBM stress conditions

dc.typeProceedings paper
dspace.entity.typePublication
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