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Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it
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Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it
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Date
2001
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vandamme, Ewout
;
Schreurs, Dominique
;
Van Dinther, G.
Journal
International Journal of RF and Microwave Computer-Aided-Engineering
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1860
since deposited on 2021-10-14
Acq. date: 2025-12-15
Citations
Metrics
Views
1860
since deposited on 2021-10-14
Acq. date: 2025-12-15
Citations