Publication:

Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it

Date

 
dc.contributor.authorVandamme, Ewout
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVan Dinther, G.
dc.contributor.imecauthorSchreurs, Dominique
dc.date.accessioned2021-10-14T18:09:01Z
dc.date.available2021-10-14T18:09:01Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5760
dc.source.beginpage114
dc.source.endpage120
dc.source.issue3
dc.source.journalInternational Journal of RF and Microwave Computer-Aided-Engineering
dc.source.volume11
dc.title

Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: