Publication:

A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

Date

1996
Proceedings Paper
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dc.contributor.authorDe Blauwe, Jan
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorDeferm, Ludo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-09-29T14:21:28Z
dc.date.available2021-09-29T14:21:28Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1150
dc.source.beginpage343
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate8/12/1996
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage346
dc.title

A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

dc.typeProceedings paper
dspace.entity.typePublication
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